HZO-based FerroNEMS MAC for in-memory computing

نویسندگان

چکیده

This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of 250 $\mu$m $\times$ 30 cantilever with 20 nm thick HZO on 1 $SiO_2$.Partial switching in achieves analog programmable control piezoelectric coefficient ($d_{31}$) which serves computational weight multiply-accumulate (MAC) operations. displacement was recorded by actuating different input voltages $V_{in}$. resulting measured function programming/poling voltage $V_p$. slopes central beam ($\delta_{max}$) vs $V_{in}$ were to be between 182.9nm/V (for -8 $V_p$) and -90.5nm/V 8 $V_p$), demonstrating that $V_p$ can used change direction motion beam. resultant from AC actuation is range -18 36 scaled product programmed $d_{31}$ (governed $V_p$). multiplication unit MAC operations unimorph. many such beams added summing capacitance changes, providing pathway implement multi-input multi-weight neuron. A scaling fabrication analysis suggests this CMOS compatible, achieving high throughput.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2022

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0120629